Infineon · FETs & Power MOSFETs · MPN IPB180N04S4H0ATMA1
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| Gate Charge(Qg) | 225nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17.94nF |
40V 180A 4V 250W 1.1mΩ@10V 1 N-channel TO-263-7-3 Single FETs, MOSFETs RoHS