Infineon IPB180N04S401

Infineon · FETs & Power MOSFETs · MPN IPB180N04S401

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)176nC@10V
Output Capacitance(Coss)3.15nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)184pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)14nF
TypeN-Channel

Technical details

N-Channel 40V 180A 188W Surface Mount TO-263-7-3

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