Infineon IPB180N04S400ATMA1

Infineon · FETs & Power MOSFETs · MPN IPB180N04S400ATMA1

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Specifications

Gate Charge(Qg)286nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)4.9nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)0.98mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)22.88nF
TypeN-Channel

Technical details

N-Channel 40V 180A 300W Surface Mount TO-263-7-3

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