Infineon · FETs & Power MOSFETs · MPN IPB180N04S4-01
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| Gate Charge(Qg) | 135nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 2.45nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.77nF |
| Type | N-Channel |
N-Channel 40V 188W TO-263-7