Infineon · FETs & Power MOSFETs · MPN IPB160N08S4-03ATMA1
No reviews yet — be the first to review Infineon IPB160N08S4-03ATMA1.
| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 112nC@10V |
| Output Capacitance(Coss) | 2.997nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 239pF |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.75nF |
| Type | N-Channel |
80V 160A 4V 208W 3.2mΩ@10V 1 N-channel N-Channel TO-263-7-3 Single FETs, MOSFETs RoHS