Infineon · FETs & Power MOSFETs · MPN IPB160N04S4L-H1
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| Gate Charge(Qg) | 190nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
40V 160A 2.2V 167W 1.5mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS