Infineon · FETs & Power MOSFETs · MPN IPB160N04S2L-03
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 163nC@5V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 700pF |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6nF |
40V 160A 1.6V 300W 2.7mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS