Infineon IPB144N12N3G

Infineon · FETs & Power MOSFETs · MPN IPB144N12N3G

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)49nC@10V
Output Capacitance(Coss)404pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)14.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.22nF

Technical details

N-Channel 120V 56A 107W Surface Mount TO-263-3

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