Infineon · FETs & Power MOSFETs · MPN IPB140N08S4-04
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 161W |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.5nF |
80V 140A 4V 161W 4.2mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS