Infineon IPB13N03LBG

Infineon · FETs & Power MOSFETs · MPN IPB13N03LBG

No reviews yet — be the first to review Infineon IPB13N03LBG.

Specifications

Current - Continuous Drain(Id)30A
RDS(on)12.5mΩ@10V
Pd - Power Dissipation52W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)74pF
Input Capacitance(Ciss)1.355nF
Gate Charge(Qg)11nC@05V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)485pF

Technical details

30A 12.5mΩ@10V 52W 2V FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs