Infineon · FETs & Power MOSFETs · MPN IPB123N10N3 G
No reviews yet — be the first to review Infineon IPB123N10N3 G.
| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 330pF |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 94W |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 12.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.88nF |
| Type | N-Channel |
100V 58A 3.5V 94W 12.3mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS