Infineon · FETs & Power MOSFETs · MPN IPB120P04P4L03ATMA2
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| Gate Charge(Qg) | 234nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 5nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 15nF |
| Type | P-Channel |
40V 120A 2.2V 136W 3.1mΩ@10V 1 P-Channel P-Channel TO-263-3-2 Single FETs, MOSFETs RoHS