Infineon · FETs & Power MOSFETs · MPN IPB120N10S4-05
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.54nF |
N-Channel 100V 120A 190W Surface Mount TO-263-3