Infineon · FETs & Power MOSFETs · MPN IPB120N04S4-04
No reviews yet — be the first to review Infineon IPB120N04S4-04.
| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
40V 120A 2V 79W 3.6mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS