Infineon · FETs & Power MOSFETs · MPN IPB120N04S4-02
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| Gate Charge(Qg) | 134nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 158W |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.74nF |
N-Channel 40V 120A 158W Surface Mount TO-263-3