Infineon · FETs & Power MOSFETs · MPN IPB120N04S302ATMA1
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 210nC@10V |
| Output Capacitance(Coss) | 3.9nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 710pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.3nF |
| Type | N-Channel |
40V 120A 4V 300W 2mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS