Infineon IPB117N20NFDATMA1

Infineon · FETs & Power MOSFETs · MPN IPB117N20NFDATMA1

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)532pF
Current - Continuous Drain(Id)84A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)11.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.65nF
TypeN-Channel

Technical details

N-Channel 200V 84A 300W Surface Mount TO-263

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