Infineon · FETs & Power MOSFETs · MPN IPB110N20N3LF
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| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 510pF |
| Current - Continuous Drain(Id) | 88A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 650pF |
| Type | N-Channel |
N-Channel 200V 88A 250W Surface Mount TO-263-3