Infineon IPB108N15N3G

Infineon · FETs & Power MOSFETs · MPN IPB108N15N3G

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)55nC@10V
Output Capacitance(Coss)378pF
Current - Continuous Drain(Id)83A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)10.8mΩ@10V
Input Capacitance(Ciss)3.23nF
TypeN-Channel

Technical details

N-Channel 150V 83A 214W Surface Mount TO-263-3

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