Infineon · FETs & Power MOSFETs · MPN IPB107N20NAATMA1
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 87nC@10V |
| Output Capacitance(Coss) | 533pF |
| Current - Continuous Drain(Id) | 88A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 10.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.1nF |
| Type | N-Channel |
200V 88A 4V 300W 10.7mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS