Infineon · FETs & Power MOSFETs · MPN IPB100P03P3L-04
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 200nC@10V |
| Output Capacitance(Coss) | 2.8nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5nF |
| RDS(on) | 4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 9.3nF |
| Type | P-Channel |
30V 100A 2.1V 200W 4mΩ@10V 1 P-Channel P-Channel TO-263-3 Single FETs, MOSFETs RoHS