Infineon · FETs & Power MOSFETs · MPN IPB100N12S305
No reviews yet — be the first to review Infineon IPB100N12S305.
| Gate Charge(Qg) | 185nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.57nF |
120V 100A 4V 300W 4.8mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS