Infineon · FETs & Power MOSFETs · MPN IPB100N08S2-07
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| Drain to Source Voltage | 75V |
|---|---|
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 N-channel |
75V 100A 4V 300W 6.8mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS