Infineon · FETs & Power MOSFETs · MPN IPB100N06S2L05ATMA2
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 230nC@10V |
| Output Capacitance(Coss) | 1.33nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.66nF |
| Type | N-Channel |
N-Channel 55V 100A 300W Surface Mount TO-263