Infineon · FETs & Power MOSFETs · MPN IPB100N04S4-H2
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 97pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.18nF |
N-Channel 40V 100A 115W Surface Mount TO-263-3