Infineon · FETs & Power MOSFETs · MPN IPB100N04S3-03
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | - |
| Input Capacitance(Ciss) | - |
40V 100A 2.1V 214W TO-263-3 Single FETs, MOSFETs RoHS