Infineon · FETs & Power MOSFETs · MPN IPB100N04S2-04
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| Gate Charge(Qg) | 172nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.3nF |
40V 100A 4V 300W 3.3mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS