Infineon IPB093N04LG

Infineon · FETs & Power MOSFETs · MPN IPB093N04LG

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation47W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)9.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF
TypeN-Channel

Technical details

40V 50A 2V 47W 9.3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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