Infineon · FETs & Power MOSFETs · MPN IPB090N06N3 G
No reviews yet — be the first to review Infineon IPB090N06N3 G.
| Gate Charge(Qg) | 36nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 71W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 9.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
N-Channel 60V 50A 71W Surface Mount TO-263-3