Infineon · FETs & Power MOSFETs · MPN IPB083N15N5LF
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 105A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.9V |
| Pd - Power Dissipation | 179W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 8.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 210pF |
150V 105A 4.9V 179W 8.3mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS