Infineon · FETs & Power MOSFETs · MPN IPB081N06L3 G
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| Gate Charge(Qg) | 22nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 690pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 8.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.7nF |
| Type | N-Channel |
N-Channel 60V Surface Mount TO-263-3