Infineon · FETs & Power MOSFETs · MPN IPB080N06N G
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 93nC@10V |
| Current - Continuous Drain(Id) | 80A |
| Output Capacitance(Coss) | 880pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 8mΩ@10V |
| Input Capacitance(Ciss) | 3.5nF |
| Type | N-Channel |
60V 80A 4V 214W 8mΩ@10V N-Channel PG-TO263-3-2 Single FETs, MOSFETs RoHS