Infineon IPB073N15N5

Infineon · FETs & Power MOSFETs · MPN IPB073N15N5

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Specifications

Gate Charge(Qg)61nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)114A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)7.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.7nF

Technical details

150V 114A 4.6V 214W 7.3mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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