Infineon · FETs & Power MOSFETs · MPN IPB068N20NM6ATMA1
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 134A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 6.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| Input Capacitance(Ciss) | 7.4nF |
| Type | N-Channel |
N-Channel 200V 134A 300W Surface Mount TO-263-3