Infineon IPB067N08N3 G

Infineon · FETs & Power MOSFETs · MPN IPB067N08N3 G

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Specifications

Drain to Source Voltage80V
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation136W
RDS(on)6.7mΩ@10V
Number1 N-channel

Technical details

80V 80A 3.5V 136W 6.7mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS

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