Infineon · FETs & Power MOSFETs · MPN IPB065N15N3GATMA1
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 93nC@10V |
| Output Capacitance(Coss) | 850pF |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.3nF |
150V 130A 4V 300W 6.5mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS