Infineon · FETs & Power MOSFETs · MPN IPB065N06LG
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| Gate Charge(Qg) | 157nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.1nF |
60V 80A 2V 250W 6.5mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS