Infineon IPB060N15N5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPB060N15N5ATMA1

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)68nC@10V
Output Capacitance(Coss)1.3nF
Current - Continuous Drain(Id)136A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF
TypeN-Channel

Technical details

N-Channel 150V 136A 250W Surface Mount TO-263-7-3

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