Infineon · FETs & Power MOSFETs · MPN IPB054N08N3GATMA1
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| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 5.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.75nF |
80V 80A 3.5V 150W 5.4mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS