Infineon · FETs & Power MOSFETs · MPN IPB054N06N3 G
No reviews yet — be the first to review Infineon IPB054N06N3 G.
| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.1nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 5.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5nF |
| Type | N-Channel |
N-Channel 60V 80A 115W Surface Mount TO-263-3