Infineon · FETs & Power MOSFETs · MPN IPB052N04NG
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Output Capacitance(Coss) | 980pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 5.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.3nF |
40V 70A 4V 79W 5.2mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS