Infineon · FETs & Power MOSFETs · MPN IPB051NE8NGATMA1
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| Drain to Source Voltage | 85V |
|---|---|
| Gate Charge(Qg) | 180nC@10V |
| Output Capacitance(Coss) | 2.27nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 5.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.1nF |
85V 100A 4V 300W 5.1mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS