Infineon · FETs & Power MOSFETs · MPN IPB050N10NF2SATMA1
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| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 103A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 5.05mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.6nF |
100V 103A 3.8V 3.8W 5.05mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS