Infineon · FETs & Power MOSFETs · MPN IPB04N03LAT
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| Gate Charge(Qg) | 32nC@5V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 1.643nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 107W |
| RDS(on) | 3.9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 263pF |
| Input Capacitance(Ciss) | 3.877nF |
| Type | N-Channel |
25V 80A 2V 107W 3.9mΩ@10V N-Channel TO-263-3-2 Single FETs, MOSFETs RoHS