Infineon IPB04N03LAG

Infineon · FETs & Power MOSFETs · MPN IPB04N03LAG

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)32nC@5V
Output Capacitance(Coss)1.643nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)263pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.877nF
TypeN-Channel

Technical details

25V 80A 2V 107W 3.9mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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