Infineon · FETs & Power MOSFETs · MPN IPB049NE7N3G
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Output Capacitance(Coss) | 805pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.57nF |
| Type | N-Channel |
N-Channel Surface Mount TO-263