Infineon · FETs & Power MOSFETs · MPN IPB049N08N5
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 490pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 4.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.77nF |
| Type | N-Channel |
80V 80A 3V 125W 4.9mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS