Infineon · FETs & Power MOSFETs · MPN IPB048N15N5LFATMA1
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| Gate Charge(Qg) | 84nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 1.8nF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.9V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 380pF |
| Type | N-Channel |
150V 150A 4.9V 313W 4.8mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS