Infineon IPB048N15N5

Infineon · FETs & Power MOSFETs · MPN IPB048N15N5

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.8nF

Technical details

N-Channel 150V 120A 300W Surface Mount TO-263-3

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