Infineon · FETs & Power MOSFETs · MPN IPB048N06LG
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 225nC@10V |
| Output Capacitance(Coss) | 2nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 525pF |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.6nF |
| Type | N-Channel |
60V 100A 2V 300W 4.7mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS